Revolutionizing Semiconductor Growth Hybrid MOCVD Technique Integrating Liquid Precursor Spray Deposition

Impact on Industries

Our hybrid MOCVD technology promises to transform several key industries:

• Consumer Electronics: Lower production costs for smartphones, laptops, TVs, and other devices make advanced technology more accessible to a wider population.
• Electric Vehicles and Clean Energy: Enhanced production efficiency for semiconductors in EV batteries, solar panels, and power electronics supports a sustainable future by reducing costs and improving performance.
• Data Centers: Faster production cycles and higher-quality semiconductors boost performance and energy efficiency in data centers, driving advancements in artificial intelligence and scientific research.
• Healthcare: More affordable and sophisticated medical devices improve diagnostic tools, patient monitoring, and treatment effectiveness, leading to better healthcare outcomes.

Technical Overview

Our hybrid MOCVD technique is versatile and can be applied to a wide range of epitaxial types, including:

1. III-V Compounds:

   • Gallium Arsenide (GaAs)
   • Indium Phosphide (InP)
   • Gallium Nitride (GaN)
   • Aluminum Nitride (AlN)

2. II-VI Compounds:

   • Zinc Selenide (ZnSe)
   • Zinc Sulfide (ZnS)

3. Oxides:

   • Zinc Oxide (ZnO)
   • Gallium Oxide (Ga2O3)

4. 2D Materials:

   • Graphene
   • Transition Metal Dichalcogenides (TMDs)

5. Perovskite Materials:

   • Lead Halide Perovskites
   • Mixed Halide Perovskites

These materials are crucial for various applications, including high-performance electronics, optoelectronics, power electronics, and advanced sensors.

Current Pain Points in MOCVD and MOVPE

MOCVD (Metal-Organic Chemical Vapor Deposition)

1. Precursor Utilization:
   • Issue: Traditional MOCVD systems often suffer from low precursor utilization efficiency. This leads to significant waste of costly precursor materials, increasing production costs.
   • Solution: OTSON’s hybrid MOCVD enhances precursor utilization by integrating liquid precursor spray deposition, ensuring more effective material usage.
2. Growth Rates:
   • Issue: Conventional MOCVD methods typically have slower growth rates, limiting production throughput and increasing manufacturing time.
   • Solution: Our hybrid approach achieves up to 200% faster growth rates, significantly boosting production capacity and efficiency.
3. Film Uniformity:
   • Issue: Achieving uniform thin films across large wafers is challenging with traditional MOCVD, leading to variations in device performance and yield.
   • Solution: The hybrid MOCVD technique provides superior control over deposition processes, resulting in highly uniform films with reduced defect density.
4. Energy Consumption:
   • Issue: High energy consumption due to the need for elevated temperatures in the gas-phase reactions, impacting operational costs and environmental footprint.
   • Solution: Our method reduces energy consumption by lowering the temperature required for initial film deposition, contributing to more sustainable manufacturing practices.
5. Process Control:
   • Issue: Traditional MOCVD relies heavily on operator expertise and manual adjustments, which can lead to inconsistencies.
   • Solution: Our AI-driven optimization continuously monitors and adjusts the process parameters in real-time, ensuring optimal conditions and consistent quality.

MOVPE (Metal-Organic Vapor Phase Epitaxy)

1. Precursor Delivery:
   • Issue: In MOVPE, the precursor delivery system can be complex and inefficient, leading to inconsistent material supply and film quality.
   • Solution: By integrating liquid precursor spray deposition, OTSON’s hybrid MOCVD ensures consistent and efficient precursor delivery.
2. Reactor Design:
   • Issue: MOVPE reactors often require complex designs to manage precursor flow and reaction kinetics, increasing system costs and maintenance needs.
   • Solution: Our hybrid system simplifies the reactor design while maintaining precise control over deposition processes.
3. Material Versatility:
   • Issue: MOVPE can be limited in terms of the range of materials it can effectively deposit, restricting its application scope.
   • Solution: The hybrid MOCVD technique is versatile, capable of depositing a wide range of materials, including III-V compounds, II-VI compounds, oxides, 2D materials, and perovskites.
4. Operational Costs:
   • Issue: The overall operational costs of MOVPE can be high due to precursor waste, energy consumption, and complex reactor maintenance.
   • Solution: OTSON’s hybrid MOCVD reduces operational costs through improved precursor utilization, energy efficiency, and simpler system maintenance.
5. Process Stability:
   • Issue: Maintaining stable process conditions over long production runs can be challenging in traditional MOVPE systems.
   • Solution: Our AI-driven system ensures continuous monitoring and adjustment, maintaining optimal conditions and enhancing process stability.

Chip Applications

Our hybrid MOCVD technology can be used to fabricate various types of semiconductor chips, including: